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Switching Diode 1N914 Silicon epitaxial planar type Formosa MS DO-35 Features Low power loss, high efficiency High reliability High speed ( trr < 4 ns ) 1.141(29.0) 1.102(28.0) .083(2.10) .051(1.30) DIA. .169(4.30) .146(3.70) Mechanical data Case : Glass, DO-35 Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by cathode band Mounting Position : Any Weight : 0.13 gram .022(.55) .018(.45) DIA. 1.141(29.0) 1.102(28.0) Dimensionsininchesand(millimeters) MAXIMUM RATINGS (AT TA=25oC unless otherwise noted) PARAMETER Non-Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward voltage Forward current Average forward current Power dissipation Junction temperature Storage temperature VR = 0 tp = 1 us CONDITIONS Symbol VRM VR IFSM IFRM IF IFAV PV Tj TSTG -55 MIN. TYP. MAX. 100 75 1.0 250 150 75 250 175 +175 UNIT V V A mA mA mA mW o o C C ELECTRICAL CHARACTERISTICS (AT TA=25oC unless otherwise noted) PARAMETER Forward voltage IF = 5mA IF = 10mA VR = 20V Reverse current VR = 20V , Tj = 150 o C VR = 75V Breakdown current Diode capacitance Rectification efficiency IR = 100uA , TP /T = 0.01 TP = 0.3ms VR = 0 , f = 1MHz , VHF = 50mV VHF = 2V , f = 100MHz IF = IR = 10mA , IRR = 1mA Reverse recovery time IF =10mA, VR =6V, IRR = 0.1 X IR , RL =100OHM CONDITIONS Symbol VF VF IR IR IR V(BR) CD nR trr trr 45 8 4 100 4.0 MIN. 0.62 0.86 TYP. MAX. 0.72 1.00 25 50 5.0 UNIT V V nA uA uA V pF % ns ns RATING AND CHARACTERISTIC CURVES (1N914) FIG.1-TYPICAL FORWARD CHARACTERISTICS 1000 FIG.3 - TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT,(mA) Tj=25 C 100 REVERSE CURRENT, (nA) 1000 Tj=25 C Pulse Width 300us 1% Duty Cycle Scattering Limit 10 100 Scattering Limit 1.0 10 0.1 0 .4 .8 1.2 1.6 2.0 FORWARD VOLT AGE,(V) 1 1 10 REVERSE VOLTAGE 100 FIG.2 - TYPICAL DIODE CAPACITANCE 3.5 10 3.0 3 FIG.4 - REVERSE CURRENT VS JUNCTION TEMPERATURE DIODE CAPACITANCE,(pF) REVERSE CURRENT, (uA) 2.5 2.0 1.5 1.0 0.5 0 10 2 =75 VR 10 V AX /M .V U AL ES 1 =7 VR 5V /T U AL .V YP ES 0.1 1 10 100 1000 10 -1 VR =2 0V / L VA P. TY S UE REVERSE VOLTAGE,(V) 10 -2 0 100 200 o JUNCTION TEMPERATURE ( C) |
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